FDS4070N3 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4070N3

40V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

February 2004

FDS4070N3

40V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low RDS(ON) in a small package.

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 15.3 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

• Fast switching, low gate charge

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

5

Drain Contact

4

6

3

7

2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

TJ, TSTG

Maximum Power Dissipation

(Note 1a)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4070N3

FDS4070N3

13’’

Ratings

40

± 20

15.3

60

3.0

–55 to +150

40

0.5

Tape width

12mm

Units

V

V

A

W

°C

°C/W

Quantity

2500 units

2004 Fairchild Semiconductor Corporation

FDS4070N3 Rev B2 (W)

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