FMMT413TA 데이터 시트보기 (PDF) - Diodes Incorporated.

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FMMT413TA

SOT23 NPN silicon planar avalanche transistor

Diodes Incorporated. 

FMMT413

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Collector-base breakdown BVCBO

voltage

Collector-emitter

breakdown voltage

BVCES

Collector-emitter

breakdown voltage

BVCEO

Emitter-base breakdown

voltage

BVEBO

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

Collector-emitter saturation VCE(sat)

voltage

Base-emitter saturation

voltage

VBE(sat)

Current in second

breakdown (pulsed)

IUSB

Static forward current

transfer ratio

Collector-emitter

inductance

Transition frequency

Output capacitance

hFE

Lce

fT

COBO

Min. Typ.

150

Max.

Unit Conditions

V

150

V IC = 100␮A

50

V IC = 10mA

6

V IE = 100␮A

100 nA VCB = 120V

100 nA VEB = 4V

150 mV IC = 10mA,

IB = 1mA

800 mV IC = 10mA,

IB = 1mA

22

A VC=110V, CCE=4.7nF (*)

25

A VC=130V, CCE=4.7nF(*)

50

IC = 10mA,

VCE = 10V

2.5

nH Standard SOT23

leads

150

MHz IC = 10mA, VCE = 5V,

f = 20MHz

2

pF VCB = 10V, IE = 0,

f = 1MHz

NOTES:

(*) Measured with a circuit possessing an approximate loop inductance of 12nH.

Issue 3 - March 2006

3

© Zetex Semiconductors plc 2006

www.zetex.com

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