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FS70UM-06 데이터 시트보기 (PDF) - Mitsumi

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FS70UM-06 Datasheet PDF : 4 Pages
1 2 3 4
MITSUBISHI Nch POWER MOSFET
FS70UM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 35A, VGS = 10V
ID = 35A, VGS = 10V
ID = 35A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50
IS = 35A, VGS = 0V
Channel to case
IS = 70A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
60
V
±0.1
µA
0.1
mA
2.0
3.0
4.0
V
5.7
7.5
m
0.200 0.263 V
50
70
S
6540
pF
1640
pF
790
pF
95
ns
195
ns
290
ns
210
ns
1.0
1.5
V
1.0 °C/W
85
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
100
8V
6V
80
PD = 125W
60
TC = 25°C
Pulse Test
5V
40
MAXIMUM SAFE OPERATING AREA
3
2
tw = 10ms
102
7
5
100ms
3
2
1ms
101
7
5
10ms
3
2
DC
100
7 TC = 25°C
5 Single Pulse
33 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
50
8V 6V
5V
40
30
TC = 25°C
Pulse Test
4.5V
20
20
4V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
10
4V
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999

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