FX70SMJ-03 데이터 시트보기 (PDF) - Renesas Electronics
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FX70SMJ-03 Datasheet PDF : 7 Pages
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FX70SMJ-03
High-Speed Switching Use
Pch Power MOS FET
Features
• Drive voltage : 4 V
• VDSS : –30 V
• rDS(ON) (max) : 12.3 mΩ
• ID : –70 A
• Integrated Fast Recovery Diode (TYP.) : 70 ns
Outline
REJ03G1456-0200
(Previous: MEJ02G0271-0101)
Rev.2.00
Aug 07, 2006
RENESAS Package code: PRSS0004ZB-A
(Package name: TO-3P)
4
3
1
23
1
2, 4
1. Gate
2. Drain
3. Source
4. Drain
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Ratings
–30
±20
–70
–280
–70
–70
–280
150
– 55 to +150
– 55 to +150
4.8
(Tc = 25°C)
Unit
Conditions
V
VGS = 0 V
V
VDS = 0 V
A
A
A
L = 10 µH
A
A
W
°C
°C
g
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
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