GF1D-E3(2006) 데이터 시트보기 (PDF) - Vishay Semiconductors
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GF1D-E3 Datasheet PDF : 4 Pages
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GF1A thru GF1M
Vishay General Semiconductor
10
30
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
0.01
0.4
Pulse Width = 300 µs
1 % Duty Cycle
Tj = 25 °C
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
10
1
Tj = 100 °C
100
Mounted on
0.2 x 0.27" (5.0 x 7.0 mm)
Copper Pad Areas
10
0.1
1
0.01
0
Tj = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214BA (GF1)
Cathode Band
0.066 (1.68)
0.040 (1.02)
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.076 MAX.
(1.93 MAX.)
0.118 (3.00)
0.100 (2.54)
0.060 (1.52)
0.030 (0.76)
Document Number 88617
26-Jun-06
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.060 MIN.
(1.52 MIN.)
0.108 (2.74)
0.098 (2.49)
0.114 (2.90)
0.094 (2.39)
0.220
(5.58) REF
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