GF1D(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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GF1D
(Rev.:2011)

Surface Mount Glass Passivated Rectifier

Vishay Semiconductors 

GF1A thru GF1M

Vishay General Semiconductor

10

1

0.1

0.01

0.4

Pulse Width = 300 µs

1 % Duty Cycle

TJ = 25 °C

0.6

0.8

1.0

1.2

1.4

1.6

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

10

30

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

10

1

1

10

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

100

1

10

TJ = 100 °C

0.1

0.01

0

TJ = 25 °C

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics

1

0.1

0.01

Mounted on

0.2" x 0.27" (5.0 mm x 7.0 mm)

Copper Pad Areas

0.1

1

10

100

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214BA (GF1)

Cathode Band

0.066 (1.68)

0.040 (1.02)

Mounting Pad Layout

0.066 (1.68)

MIN.

0.076 (1.93)

MAX.

0.118 (3.00)

0.100 (2.54)

0.060 (1.52)

0.030 (0.76)

0.187 (4.75)

0.167 (4.24)

0.015 (0.38)

0.0065 (0.17)

0.006 (0.152) TYP.

0.226 (5.74)

0.196 (4.98)

0.108 (2.74)

0.098 (2.49)

0.060 (1.52)

MIN.

0.114 (2.90)

0.094 (2.39)

0.220 (5.58)

REF.

Document Number: 88617 For technical questions within your region, please contact one of the following:

Revision: 15-Mar-11

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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