GN2470K4(2004) 데이터 시트보기 (PDF) - Supertex Inc

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GN2470K4
(Rev.:2004)

Insulated Gate Bipolar Transistor

Supertex Inc 

GN2470

IGBT

Transconductance vs. Collector Current

1.2

1.1

-55oC

1.0

0.9

0.8

0.7

25oC

125oC

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 2.8 3.0 3.3 3.5

IC (A)

Application

Using the GN2470 IGBT in place of a MOSFET improves the performance of SR03x-based power

supplies.

SR03x Efficiency

50

VN2460, no EMI

40

GN2470, no EMI

30

VN2460, w/EMI

GN2470, w/EMI

20

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

PUNREG (W)

6

Rev.B – 4-22-04

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