H5PS2562GFR 데이터 시트보기 (PDF) - Hynix Semiconductor

부품명

상세내역

제조사

H5PS2562GFR

256Mb DDR2 SDRAM

Hynix Semiconductor 

H5PS2562GFR series

1. Description

1.1 Device Features & Ordering Information

1.1.1 Key Features

• VDD ,VDDQ =1.8 +/- 0.1V

• All inputs and outputs are compatible with SSTL_18 interface

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface

• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)

• Differential Data Strobe (DQS, DQS)

• Data outputs on DQS, DQS edges when read (edged DQ)

• Data inputs on DQS centers when write(centered DQ)

• On chip DLL align DQ, DQS and DQS transition with CK transition

• DM mask write data-in at the both rising and falling edges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock

• Programmable CAS latency 2, 3, 4, 5, 6 and 7 supported

• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported

• Programmable burst length 4 / 8 with both nibble sequential and interleave mode

• Internal four bank operations with single pulsed RAS

• Auto refresh and self refresh supported

• tRAS lockout supported

• 8K refresh cycles /64ms

• JEDEC standard 84ball FBGA(x16) : 7.5mm x 12.5mm

• Full strength driver option controlled by EMRS

• On Die Termination supported

• Off Chip Driver Impedance Adjustment supported

• Self-Refresh High Temperature Entry

• Partial Array Self Refresh support

Rev.1.3 / June. 2012

4

Share Link: