HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
25
+25oC
20
+175oC
15
VGE = 5V
10
5
0
2
4
6
8
10
L, INDUCTANCE (mH)
650
VGE = 5V
600
550
+25oC
500
450
400
350
300
+175oC
250
200
150
0
2
4
6
8
10
L , INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
FREQUENCY = 1MHz
CIES
CRES
COES
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF IG = 1mA, RL = 1.7Ω, TC = +25oC
12
6
10
5
8
VCE = 12V
4
6
3
VCE = 4V
4
2
VCE = 8V
2
1
0
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B