HM62V8512CLTTI-7 데이터 시트보기 (PDF) - Renesas Electronics

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HM62V8512CLTTI-7

Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62V8512CI Series

DC Characteristics

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage current

|ILI|

—

|ILO|

—

Operating power

supply current: DC

I CC

—

Operating power supply current ICC1

—

I CC2

—

Standby power supply

current: DC

I SB

—

—

1

µA Vin = VSS to VCC

—

1

µA CS = VIH or OE = VIH or

WE = VIL, VI/O = VSS to VCC

5

10

mA CS = VIL,

others = VIH/VIL, II/O = 0 mA

7

25

mA Min cycle, duty = 100%

CS = VIL, others = VIH/VIL

II/O = 0 mA

2

5

mA Cycle time = 1 µs,

duty = 100%

II/O = 0 mA, CS ≤ 0.2 V

VIH ≥ VCC – 0.2 V,

VIL ≤ 0.2 V

0.1

0.3

mA CS = VIH

Standby power supply

current (1): DC

I SB1

—

0.8*2

20*2

µA Vin ≥ 0 V,

CS ≥ VCC – 0.2 V

Output low voltage

VOL

—

—

0.4

V IOL = 2.0 mA

—

—

0.2

V IOL = 100 µA

Output high voltage

VOH

VCC – 0.2 —

—

V IOH = –100 µA

2.4

—

—

V IOH = –1.0 mA

Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.

2. This characteristics is guaranteed only for L-version.

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Typ

Max

Input capacitance*1

Cin

—

8

Input/output capacitance*1 CI/O

—

10

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

5

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