HSK120 데이터 시트보기 (PDF) - Renesas Electronics

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HSK120

Silicon Epitaxial Planar Diode for High Speed Switching

Renesas Electronics 

HSK120

Absolute Maximum Ratings

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average rectified current

Junction temperature

Storage temperature

Note: 1. Within 1µs forward surge current.

Symbol

VRM

VR

IFM

IFSM *1

IO

Tj

Tstg

Value

70

60

450

4

150

175

–65 to +175

(Ta = 25°C)

Unit

V

V

mA

A

mA

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Condition

Forward voltage

VF

Reverse voltage

VR

Reverse current

IR

Capacitance

C

Reverse recovery time trr

—

—

70

—

—

—

—

—

—

—

0.8

V

IF = 10 mA

—

V

IR = 5 µA

0.1

µA

VR = 60 V

3.0

pF

VR = 0 V, f = 1 MHz

3.0

ns

IF = 10 mA, VR = 6 V, RL = 50 Ω, Irr = 0.1IR

Rev.4.00, Mar.22.2004, page 2 of 4

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