HY27UF084G2M-T 데이터 시트보기 (PDF) - Hynix Semiconductor

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HY27UF084G2M-T

4Gbit (512Mx8bit) NAND Flash

Hynix Semiconductor 

Document Title

4Gbit (512Mx8bit) NAND Flash Memory

HY27UF084G2M Series

4Gbit (512Mx8bit) NAND Flash

Revision History

Revision

No.

History

0.0

Initial Draft.

1) Add ULGA Package.

- Figures & texts are added.

2) Add Read ID Table

3) Correct the test Conditions (DC Characteristics table)

Test Conditions (ILI, ILO)

Before VIN=VOUT=0 to 3.6V

After VIN=VOUT=0 to Vcc (max)

3) Change AC Conditions table

4) Add tWW parameter ( tWW = 100ns, min)

0.1

- Texts & Figures are added.

- tWW is added in AC timing characteristics table.

4) Edit System Interface Using CE don’t care.

5) Add Marking Information.

6) Correct Address Cycle Map.

7) Correct PKG dimension (TSOP PKG)

CP

Before 0.050

After

0.100

8) Delete the 1.8V device’s features.

Draft Date Remark

Dec. 2004

Initial

Aug. 08. 2005 Preliminary

Rev. 0.7 / Dec. 2006

2

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