HYB314175BJ-50- 데이터 시트보기 (PDF) - Siemens AG

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HYB314175BJ-50-

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)

Siemens AG 

HYB 314175BJ/BJL-50/-55/-60

3.3V 256K x 16 EDO-DRAM

DC Characteristics (cont’d)

Parameter

Average VCC supply current during

hyper page mode (EDO) operation:

-50 version

-55 version

-60 version

Standby VCC supply current

(RAS = LCAS = UCAS = WE = VCC – 0.2 V)

Average VCC supply current during

CAS-before-RAS refresh mode:

-50 version

-55 version

-60 version

Symbol Limit Values

min.

max.

–

ICC4

115

115

100

ICC5

–

1

–

ICC6

125

120

105

Unit Test

Condition

2, 3, 4

mA

mA 1

2, 4

mA

Standby VCC current (L-version)

ICC5

–

(RAS = LCAS = UCAS = WE = VCC – 0.2 V)

Self Refresh Current (L-version)

(RAS, LCAS, UCAS = 0.2V

A0 – A8 = VCC – 0.2 V or 0.2 V)

ICCS

–

200

µA

250

µA

Capacitance

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A8)

CI1

–

5

pF

Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2

–

7

pF

Output capacitance (l/O1 to l/O16)

CIO

–

7

pF

Semiconductor Group

6

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