HYB314175BJ-50- 데이터 시트보기 (PDF) - Siemens AG

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HYB314175BJ-50-

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)

Siemens AG 

HYB 314175BJ/BJL-50/-55/-60

3.3V 256K x 16 EDO-DRAM

Parameter

Symbol

Limit Values

Unit Note

-50

-55

-60

min max min max min max

Hyper Page Mode (EDO) Read-Modify-Write Cycle

Hyper page mode read/write cycle tPRWC 58 – 58 – 68 – ns

time

CAS precharge to WE delay time tCPWD 41 – 41 – 49 – ns

CAS before RAS Refresh Cycle

CAS setup time

tCSR

CAS hold time

tCHR

RAS to CAS precharge time

tRPC

Write to RAS precharge time

tWRP

Write to RAS hold time

tWRH

5 – 5 – 5 – ns

10 – 10 – 10 – ns

5 – 5 – 5 – ns

10 – 10 – 10 – ns

10 – 10 – 10 – ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35 – 35 – 40 – ns

Self Refresh Cycle (L-Version only)

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100 – 100 – 100 – µs

95 – 110 – 110 – ns

– 50 – – 50 – – 50 – ns

Semiconductor Group

9

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