HYM64V1005GU 데이터 시트보기 (PDF) - Siemens AG

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HYM64V1005GU

3.3V 1M × 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module

Siemens AG 

HYM 64(72)V1005GU-50/-60

1M x 64/72 DRAM Module

AC Characteristics (contd’ ) 5)6)

TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

-50

-60

min. max. min. max.

Hyper Page Mode (EDO) Read-modify-Write Cycle

Hyper page mode (EDO) read-write tPRWC

58

–

68

–

cycle time

CAS precharge to WE

tCPWD

41

–

49

–

Unit

ns

ns

16E

Note

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

CAS hold time

tCHR

RAS to CAS precharge time

tRPC

Write to RAS precharge time

tWRP

Write hold time referenced to RAS

tWRH

10

–

10

–

ns

10

–

10

–

ns

5

–

5

–

ns

10

–

10

–

ns

10

–

10

–

ns

Capacitance

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V; f = 1 MHz

Parameter

Input Capacitance (A0 to A9)

Input Capacitance (RAS0, RAS2)

Input Capacitance (CAS0-CAS7)

Input Capacitance (WE0,WE2,OE0,OE2)

I/O Capacitance (DQ0-DQ63,CB0-CB8)

Input Capacitance (SCL, SA0-2)

Input/Output Capacitance (SDA)

Symbol

CI1

CI2

CI3

CI4

CIO1

Cs

Cs

Limit Values

min.

max.

–

55

–

50

–

10

–

50

–

11

–

8

–

10

Unit

pF

pF

pF

pF

pF

pF

pF

Semiconductor Group

11

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