IHW30N90T(2006) 데이터 시트보기 (PDF) - Infineon Technologies

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IHW30N90T
(Rev.:2006)

Soft Switching Series

Infineon Technologies 

Soft Switching Series

IHW30N90T

q

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology

with anti-parallel diode

Features:

• 1.1V Forward voltage of antiparallel diode

• TrenchStop® and Fieldstop technology for 900 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

C

G

E

- easy parallel switching capability due to positive

temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Application specific optimisation of inverse diode

PG-TO-247-3-21

• Pb-free lead plating; RoHS compliant

Applications:

• Microwave Oven

• Soft Switching Applications for ZCS

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

IHW30N90T 900V 30A

1.5V

175°C

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C

Diode forward current

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Transient Gate-emitter voltage (tp < 5 ms)

Power dissipation, TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Marking

H30T90

Symbol

VCE

IC

ICpuls

-

IF

IFpuls

VGE

Ptot

Tj

Tstg

-

Package

PG-TO-247-3-21

Value

900

60

30

900

90

23

13

36

±20

±25

428

-40...+175

-55...+175

260

Unit

V

A

V

W

°C

°C

1 J-STD-020 and JESD-022

Power Semiconductors

1

Rev. 2.1 Apr 06

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