IHW30N90T(2006) 데이터 시트보기 (PDF) - Infineon Technologies
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IHW30N90T Datasheet PDF : 12 Pages
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Soft Switching Series
IHW30N90T
q
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
0.35
K/W
1.1
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=30A
Tj=25°C
Tj=150°C
Tj=175°C
VGE=0V, IF=10A
Tj=25°C
Tj=150°C
Tj=175°C
IC=150µA,VCE=VGE
VCE=900V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
900
-
-
-
-
-
-
4.6
-
-
-
-
Value
Typ.
-
1.5
1.7
1.8
1.1
1.0
1.0
5.3
-
-
-
26
Unit
max.
-V
1.7
-
-
1.3
-
-
6
µA
250
2500
600 nA
-S
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=720V, IC=30A
-
VGE=15V
Internal emitter inductance
LE
-
measured 5mm (0.197 in.) from case
2617
96
38
280
13
- pF
-
-
- nC
- nH
Power Semiconductors
2
Rev. 2.1 Apr 06
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