H30T90 데이터 시트보기 (PDF) - Infineon Technologies
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H30T90 Datasheet PDF : 12 Pages
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Soft Switching Series
IHW30N90T
q
Ciss
1nF
180V
10V
720V
100pF
Coss
5V
Crss
0V
0nC 50nC 100nC 150nC 200nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
250nC
10pF
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
D=0.5
10-1K/W
0.2
R,(K/W) τ, (s)
0.1
0.1271
0.1098
5.93*10-2
6.99*10-3
0.0869
0.05 0.0262
5.93*10-4
5.54*10-5
0.02
R1
R2
0.01
single pulse
C1=τ1/R1 C2=τ2/R2
10-2K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 19. IGBT transient thermal
resistance
(D = tp / T)
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
R,(K/W)
0.0715
0.2222
0.4265
0.364
0.0181
R1
τ, (s)
9.45*10-2
2.55*10-2
3.6*10-3
5.1*10-4
1.09*10-4
R2
0.01
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 20. Typical Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
Power Semiconductors
8
Rev. 2.3 Nov 08
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