IRF7101PBF 데이터 시트보기 (PDF) - International Rectifier

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IRF7101PBF

HEXFET® Power MOSFET

International Rectifier 

IRF7101PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

20 ––– ––– V VGS = 0V, ID = 250µA

––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.10 Ω VGS = 10V, ID = 1.8A ƒ

––– ––– 0.15

VGS = 4.5V, ID = 1.0A ƒ

1.0 ––– 3.0 V VDS = VGS, ID = 250µA

1.1 ––– ––– S VDS = 15V, ID = 3.5A ƒ

––– ––– 2.0 µA VDS = 20V, VGS = 0V

––– ––– 250

VDS = 16V, VGS = 0V, TJ = 125 °C

––– ––– 100 nA VGS = 12V

––– ––– -100

VGS = - 12V

––– ––– 15

ID = 1.8A

––– ––– 2.0 nC VDS = 16V

––– ––– 3.6

VGS = 10V

––– 7.0 –––

VDD = 10V

––– 10 ––– ns ID = 1.8A

––– 24 –––

RG = 8.2Ω

––– 30 –––

RD = 26Ω

D

––– 4.0 –––

nH Between lead,6mm(0.25in.)

from package and center G

––– 6.0 –––

of die contact

S

––– 320 –––

VGS = 0V

––– 250 ––– pF VDS = 15V

––– 75 –––

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 2.0

showing the

A integral reverse

G

––– ––– 14

p-n junction diode.

S

––– ––– 1.2

––– 36 54

––– 41 62

V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ

ns TJ = 25°C, IF = 1.7A

nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

‚ ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

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