IRF7104TRPBF 데이터 시트보기 (PDF) - International Rectifier

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IRF7104TRPBF

HEXFET® Power MOSFET

International Rectifier 

IRF7104PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

-20 ––– –––

––– -0.015 –––

––– 0.19 0.25

––– 0.30 0.40

-1.0 ––– -3.0

––– 2.5 –––

––– ––– -2.0

––– ––– -25

––– ––– -100

––– ––– 100

––– 9.3 25

––– 1.6 –––

––– 3.0 –––

––– 12 40

––– 16 40

––– 42 90

––– 30 50

V

V/°C

Ω

V

S

µA

nA

nC

ns

VGS = 0V, ID = -250µA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -1.0A ƒ

VGS = -4.5V, ID = -0.50A ƒ

VDS = VGS, ID = -250µA

VDS = -15V, ID = -2.3A ƒ

VDS = -16V, VGS = 0V

VDS = -16V, VGS = 0V, TJ = 55 °C

VGS = -12V

VGS = 12V

ID = -2.3A

VDS = -10V

VGS = -10V ƒ

VDD = -10V

ID = -1.0A

RG = 6.0Ω

RD = 10Ω ƒ

D

––– 4.0 –––

nH Between lead,6mm(0.25in.)

from package and center G

––– 6.0 –––

of die contact

S

––– 290 –––

––– 210 –––

––– 67 –––

VGS = 0V

pF VDS = -15V

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– -2.0

showing the

A

integral reverse

G

––– ––– -9.2

p-n junction diode.

S

––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

––– 69 100 ns TJ = 25°C, IF = -1.25A

––– 90 140 nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ ISD ≤ -2.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

2

„ Surface mounted on FR-4 board, t ≤ 10sec.

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