SIHFB9N30A 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFB9N30A Datasheet PDF : 8 Pages
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IRFB9N30A, SiHFB9N30A
Vishay Siliconix
400
ID
TOP
4.2A
5.9A
BOTTOM 9.3A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
400
380
360
340
A
0
2
4
6
8
10
I av , Avalanche Current (A)
Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91102
S-Pending-Rev. A, 03-Jun-08
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