SIHFB9N65A-E3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFB9N65A-E3 Datasheet PDF : 9 Pages
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IRFB9N65A, SiHFB9N65A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
TJ = 150° C
TJ = 25° C
1
1
0.1
0.1
20µs PULSE WIDTH
4.5V TJ= 25 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.1
4.0
V DS= 100V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
1
0.1
1
20µs PULSE WIDTH
TJ= 150 °C
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 ID = 5.2A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91104
S11-0561-Rev. C, 11-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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