SIHFB9N65A-E3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHFB9N65A-E3
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFB9N65A, SiHFB9N65A

Vishay Siliconix

2000

1600

1200

800

VGS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

400

Crss

0

A

1

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25° C

0.1

0.2

VGS = 0 V

0.4

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 5.2A

16

12

VDS = 520V

VDS = 325V

VDS = 130V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

10

20

30

40

50

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

10

100us

1ms

1

10ms

TC = 25°C

TJ = 150°C

Single Pulse

0.1

10

100

1000

VDS , Drain-to-Source Voltage (V)

10000

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91104

S11-0561-Rev. C, 11-Apr-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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