SIHFB9N65A-E3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFB9N65A-E3 Datasheet PDF : 9 Pages
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IRFB9N65A, SiHFB9N65A
Vishay Siliconix
10.0
8.0
6.0
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
- VDD
4.0
Fig. 10a - Switching Time Test Circuit
VDS
2.0
90 %
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91104
S11-0561-Rev. C, 11-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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