SIHFP23N50L-E3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFP23N50L-E3 Datasheet PDF : 11 Pages
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IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS
TOP
15V
10V
8.0V
10
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.001
0.1
4.5 V
20µs PULSE WIDTH
Tj = 25 °C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1000.00
100.00
10.00
TJ = 25 °C
TJ = 150 °C
20 µs PULSE WIDTH
1.00
1.0
TJ = 150°C
6.0
11.0
16.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4,5 V
0.1
1
20µs PULSE WIDTH
Tj = 150 °C
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 ID = 23 A
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
(°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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