DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SIHFP23N50L-E3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명
상세내역
제조사
SIHFP23N50L-E3
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
SIHFP23N50L-E3 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
www.vishay.com
VERSION 2: FACILITY CODE = Y
B
3 R/2
4
E
E/2 S
Q
2xR
(2)
D
12
3
5 L1
C
L
2 x b2
3xb
2x e
b4
0.10 M C A M
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
See view B
Package Information
Vishay Siliconix
A
A2
A
4
D
A
7 ØP
Ø k M DBM
D2
(Datum B)
ØP1
4
D1
4
Thermal pad
A
C
A1
D DE E
CC
View B
Planting
4
E1
0.01 M D B M
View A - A
(b1, b3, b5)
Base metal
(c)
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
DIM.
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.58
5.31
2.21
2.59
1.17
2.49
0.99
1.40
0.99
1.35
1.53
2.39
1.65
2.37
2.42
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.82
13.08
-
NOTES
DIM.
D2
E
E1
e
Øk
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
-
5.46 BSC
0.254
14.20
16.25
3.71
4.29
3.51
3.66
-
7.39
5.31
5.69
4.52
5.49
5.51 BSC
NOTES
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
2
Document Number: 91360
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]