SIHFP27N60K(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHFP27N60K
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFP27N60K, SiHFP27N60K

Vishay Siliconix

100000

10000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

Coss

100

Crss

10

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

1000

100

10

T J= 150 ° C

1

T J= 25 ° C

V GS= 0 V

0.1

0.2

0.5

0.8

1.1

1.4

V SD,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

12

ID = 28A

10

VDS = 480V

VDS = 300V

VDS = 120V

7

5

2

0

0

30

60

90

120

150

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA

LIMITED BY RDS(on)

10

100µsec

1msec

1

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

10

100

10msec

1000

10000

VDS , Drain-toSource Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91219

S11-0487-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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