IRFPS37N50APBF 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
IRFPS37N50APBF Datasheet PDF : 9 Pages
| |||
IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.28
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 30 V
-
-
± 100 nA
VDS = 500 V, VGS = 0 V
-
-
25
μA
VDS = 400 V, VGS = 0 V, TJ = 150 °C
-
-
250
VGS = 10 V
ID = 22 Ab
-
-
0.13
VDS = 50 V, ID = 22 Ab
20
-
-
S
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V , f = 1.0 MHz
-
VGS = 0 V VDS = 400 V , f = 1.0 MHz
-
VDS = 0 V to 400 V
-
-
VGS = 10 V
ID = 36 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 36 A,
-
RG = 2.15 , RD = 7.0
see fig. 10b
-
-
5579
-
810
-
36
-
pF
7905
-
221
-
400
-
-
180
-
46
nC
-
71
23
-
98
-
ns
52
-
80
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
36
A
-
-
144
Body Diode Voltage
VSD
TJ = 25 °C, IS = 36 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
570
860
ns
TJ = 25 °C, IF = 36 A, dI/dt = 100 A/μsb
Qrr
-
8.6
13
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91258
S11-0111-Rev. C, 07-Feb-11
Share Link: 