SIHFU1N60A-E3(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFU1N60A-E3 Datasheet PDF : 8 Pages
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Vishay Siliconix
10000
1000
100
V GS = 0V,
f = 1MHz
C iss = C gs + C gd, C dsSHORTED
C rss = C gd
C oss= C ds + C gd
Ciss
Coss
10
Crss
1
A
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
TJ = 150° C
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 1.4A
VDS = 480V
16
VDS = 300V
VDS = 120V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8 10 12 14
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10us
100us
1
1ms
TC = 25°C
TJ = 150°C
Single Pulse
0.1
10
100
10ms
1000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
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4
Document Number: 91267
S-81367-Rev. A, 21-Jul-08
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