SIHFU1N60A-E3(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHFU1N60A-E3
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

Vishay Siliconix

200

ID

TOP

0.65A

0.9A

160

BOTTOM 1.4A

120

80

40

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

770

750

730

710

690

670

0.0

0.4

0.8

1.2

I av , Avalanche Current (A)

Fig. 12d - Basic Gate Charge Waveform

A

1.6

VGS

QGS

VG

QG

QGD

Charge

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91267

S-81367-Rev. A, 21-Jul-08

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