IRGB20B60PD1PBF 데이터 시트보기 (PDF) - International Rectifier
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IRGB20B60PD1PBF Datasheet PDF : 11 Pages
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IRGB20B60PD1PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 —
—
V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
— 0.32 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG
Internal Gate Resistance
—
4.3
—
Ω 1MHz, Open Collector
— 2.05 2.35
IC = 13A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.50 2.80 V IC = 20A, VGE = 15V
— 2.65 3.00
IC = 13A, VGE = 15V, TJ = 125°C
— 3.30 3.70
IC = 20A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
—
-11
— mV/°C VCE = VGE, IC = 1.0mA
gfe
Forward Transconductance
—
19
—
S VCE = 50V, IC = 40A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
—
1.0 250 µA VGE = 0V, VCE = 600V
—
0.1
— mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage Drop
—
1.5 1.8
V IF = 4.0A, VGE = 0V
— 1.4 1.7
IF = 4.0A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg
Total Gate Charge (turn-on)
—
68 102
IC = 13A
17
Qgc
Gate-to-Collector Charge (turn-on)
—
24
36 nC VCC = 400V
CT1
Qge
Gate-to-Emitter Charge (turn-on)
—
10
15
VGE = 15V
Eon
Turn-On Switching Loss
—
95 140
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 100 145 µJ VGE = +15V, RG = 10Ω, L = 200µH
— 195 285
f TJ = 25°C
td(on)
Turn-On delay time
—
20
26
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
—
5.0
7.0 ns VGE = +15V, RG = 10Ω, L = 200µH
— 115 135
fà TJ = 25°C
tf
Fall time
— 6.0 8.0
Eon
Turn-On Switching Loss
— 165 215
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 150 195 µJ VGE = +15V, RG = 10Ω, L = 200µH
— 315 410
f TJ = 125°C
11,13
WF1,WF2
td(on)
Turn-On delay time
—
19
25
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
—
6.0
8.0 ns VGE = +15V, RG = 10Ω, L = 200µH
— 125 140
fà TJ = 125°C
12,14
WF1,WF2
tf
Fall time
—
13
17
Cies
Input Capacitance
— 1560 —
VGE = 0V
16
Coes
Output Capacitance
—
95
—
VCC = 30V
Cres
Coes eff.
Coes eff. (ER)
g Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
g Effective Output Capacitance (Energy Related)
—
—
—
20
83
61
— pF f = 1Mhz
—
VGE = 0V, VCE = 0V to 480V
—
15
TJ = 150°C, IC = 80A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22Ω, VGE = +15V to 0V
trr
Diode Reverse Recovery Time
—
28
42 ns TJ = 25°C IF = 4.0A, VR = 200V,
19
—
38
57
TJ = 125°C di/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
—
40
60 nC TJ = 25°C IF = 4.0A, VR = 200V,
21
—
70 105
TJ = 125°C di/dt = 200A/µs
Irr
Peak Reverse Recovery Current
—
2.9 5.2
A TJ = 25°C IF = 4.0A, VR = 200V,
19,20,21,22
— 3.7 6.7
TJ = 125°C di/dt = 200A/µs
CT5
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2
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