IS42S16100C1 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42S16100C1

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16100C1

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Vdd max

Maximum Supply Voltage

Vddq max

Maximum Supply Voltage for Output Buffer

Vin

Input Voltage

Vout

Output Voltage

Pd max

Allowable Power Dissipation

Ics Output Shorted Current

Topr

Operating Temperature

Com

Ind.

Tstg

Storage Temperature

Rating Unit

–1.0 to +4.6 V

–1.0 to +4.6 V

–1.0 to +4.6 V

–1.0 to +4.6 V

1

W

50

mA

0 to +70 °C

-40 to +85 °C

–55 to +150 °C

DC RECOMMENDED OPERATING CONDITIONS(2) (At Ta = 0 to +70°C)

Symbol

Vdd, Vddq

Vih

Vil

Parameter

Supply Voltage

Input High Voltage(3)

Input Low Voltage(4)

Min.

3.0

2.0

-0.3

Typ.

Max.

Unit

3.3

3.6

V

—

Vdd + 0.3

V

—

+0.8

V

CAPACITANCE CHARACTERISTICS(1,2) (At Ta = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol Parameter

Typ. Max. Unit

Cin1

Cin2

Input Capacitance: A0-A11

—

Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) —

4

pF

4

pF

CI/O

Data Input/Output Capacitance: DQ0-DQ15

—

5

pF

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-

ability.

2. All voltages are referenced to GND.

3. Vih (max) = Vddq + 2.0V with a pulse width ≤ 3 ns.

Integrated Silicon Solution, Inc. — www.issi.com

5

Rev.  F

08/24/09

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