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IS42S16100C1 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42S16100C1 Datasheet PDF : 81 Pages
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IS42S16100C1
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min. Max. Unit
Iil
Input Leakage Current 0V Vin VDD, with pins other than
the tested pin at 0V
–5
5
µA
Iol
Output Leakage Current Output is disabled, 0V Vout VDD
–5
5
µA
Voh
Output High Voltage Level Iout = –2 mA
2.4 —
V
Vol
Output Low Voltage Level Iout = +2 mA
0.4
V
Icc1
Operating Current(1,2)
One Bank Operation, CAS latency = 3 Com. -5
Burst Length=1
Com. -6
trc trc (min.)
Com. -7
Iout = 0mA
Ind. -7
— 170 mA
— 160 mA
— 140 mA
— 160 mA
Icc2p Precharge Standby Current CKE Vil (max)
tck = tck (min) Com. —
Ind. —
Icc2ps (In Power-Down Mode)
tck =
Com. —
Ind. —
3 mA
4 mA
2
mA
3
mA
Icc3n Active Standby Current CKE Vih (min)
Icc3ns (In Non Power-Down Mode)
tck = tck (min) —
40 mA
tck =
Com. —
30 mA
Ind. —
30 mA
Icc4
Operating Current
(In Burst Mode)(1)
tck = tck (min)
Iout = 0mA
CAS latency = 3 Com. -5
Com. -6
Com. -7
Ind. -7
— 170 mA
— 150 mA
— 130 mA
— 150 mA
CAS latency = 2 Com. -5
Com. -6
Com. -7
Ind. -7
— 170 mA
— 150 mA
— 130 mA
— 150 mA
Icc5
Auto-Refresh Current
trc = trc (min)
CAS latency = 3 Com. -5
Com. -6
Com. -7
Ind. -7
— 120 mA
— 100 mA
— 70 mA
— 90 mA
CAS latency = 2 Com. -5
Com. -6
Com. -7
Ind. -7
— 120 mA
— 100 mA
— 70 mA
— 90 mA
Icc6
Self-Refresh Current
CKE 0.2V
1 mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vdd and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  F
08/24/09

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