IW4017B 데이터 시트보기 (PDF) - Estek Electronics Co. Ltd
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IW4017B Datasheet PDF : 6 Pages
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IW4017B
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage (Referenced to GND)
-0.5 to 20
V
V IN
DC Input Voltage (Referenced to GND)
-0.5 to VCC 0.5
V
VOUT
IIN
PD
PD
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP
SOIC Package
Power Dissipation per Output Transistor
-0.5 to VCC 0.5
V
+- 10
mA
750
mW
500
100
mW
Tstg Storage Temperature
-65 to 150
°C
TL Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating - Plastic DIP: - 10 mW/ °C from 65°to 125 °C
SOIC Package
°C from 65°to 125 °C
Recommended Operating Conditions
Symbol
VCC
VIN , VOUT
TA
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min
Max
Unit
3.0
18
V
0
VCC
V
-55
125
°C
This device contains protection circuitry to guard against damage due to high static voltages or
electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum
rated voltages to this high-impedance circuit. For proper operation, V IN and V OUT should be constrained to the
range GND (VIN or VOUT) VCC .
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC
Unused outputs must be left open.
BEIJING ESTEK ELECTRONICS CO.,LTD
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