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J308 데이터 시트보기 (PDF) - ON Semiconductor

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J308
ON-Semiconductor
ON Semiconductor ON-Semiconductor
J308 Datasheet PDF : 6 Pages
1 2 3 4 5 6
J308
C1
INPUT L1
RS = 50 Ω
C2
L2
VS
S
G
C3
U310
D
C4
C6
BW (3 dB) 36.5 MHz
ID 10 mAdc
VDS 20 Vdc
L3 OUTPUT Device case grounded
RL = 50 Ω IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz
C5
C1 = 110 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
L4
C3, C4, C6 = 0.56 pF Johanson Air variable trim-
mer.
SHIELD
VD
L1 = 1/8x 1/32x 15/8copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8x 1/32x 17/8copper bar.
Figure 12. 450 MHz IMD Evaluation Amplifier
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with
C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP)
value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP
values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40
U310 JFET
+20 VDS = 20 Vdc
ID = 10 mAdc
0 F1 = 449.5 MHz
F2 = 450.5 MHz
−20
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT
−40
−60
−80
3RD ORDER IMD OUTPUT
−100
−120
−120 −100 −80 −60 −40 −20
0
+20
INPUT POWER PER TONE (dBm)
Example of intercept point plot use:
Assume two inband signals of 20 dBm at the amplifi-
er input. They will result in a 3rd order IMD signal at
the output of 90 dBm. Also, each signal level at the
output will be 11 dBm, showing an amplifier gain of
9.0 dB and an intermodulation ratio (IMR) capability
of 79 dB. The gain and IMR values apply only for sig-
nal levels below comparison.
Figure 13. Two Tone 3rd Order Intercept Point
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