LLDB3 데이터 시트보기 (PDF) - TSC Corporation

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LLDB3

150mW Bi-directional Trigger Diode

TSC Corporation 

Small Signal Product

LLDB3/ LLDB3TG

Taiwan Semiconductor

150mW Bi-directional Trigger Diode

FEATURES

- Surface mounted device

- Hermetically sealed glass

- Matte Tin(Sn) terminal finish

- All external surfaces are corrosion resistant and

terminals are readily solderable

MECHANICAL DATA

- Case: Mini-MELF package

- High temperature soldering guaranteed: 260°C/10s

- Weight: 29 ± 2.5 mg

- Terminal: Pure tin plated, lead free,

solderable per MIL-STD-202, method 208 guaranteed

- Pb free and RoHS compliant

Mini-MELF (LL34)

Hermetically Sealed Glass

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

PARAMETER

SYMBOL

VALUE

Repetitive Peak Forward Current

Pulse Width = 20µs

IFRM

Power Dissipation

PD

Thermal Resistance (Junction to Ambient)

(Note)

RθJA

Junction and Storage Temperature Range

TJ, TSTG

Notes: Valid provided that electrodes are kept at ambient temperature

2

150

400

- 40 to + 125

UNIT

A

mW

oC/W

oC

Break-Over Voltage

PARAMETER

Break-Over Voltage Symmetry

Dynamic Breakdown Voltage

Output Voltage

Leakage Current

Break-Over Current

Notes: Test Circuit

LLDB3

LLDB3TG

LLDB3

LLDB3TG

LLDB3

LLDB3TG

LLDB3

LLDB3TG

SYMBOL

VBO

MIN

28

30

+ / -VBO

5

△V

9

VO

5

IB

IBO

-

TYP

32

32

MAX

36

34

±3

±2

10

100

15

TEST CONDITION

C=22nF

C=22nF

IBO to IF=10mA

(Note)

VB = 0.5VBO (Max)

C=22nF

UNIT

V

V

V

V

µA

µA

Document Number: DS_S1407002

Version: D14

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