BC160 데이터 시트보기 (PDF) - STMicroelectronics
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BC160 Datasheet PDF : 5 Pages
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BC160-BC161
THERMAL DATA
Rth j-c ase Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
35
Max
200
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
ICE S
Collector Cutoff
Current (IE = 0)
V(B R)CBO
V(BR)CE O *
V(B R)E BO
VCE( sat )*
Collector-base
Breakdown Voltage
(IE = 0)
Collector-emitter
Breakdown Voltage
(IB = 0)
Emitter-base
Breakdown Voltage
(IC = 0)
Collector-emitter
Saturation Voltage
VCE S = 40 V for BC160
VCE S = 60 V for BC161
VCE S = 40 V for BC160
T amb = 150 °C
VCE S = 60 V for BC161
T amb = 150 °C
IC = – 100 µA
for BC160
for BC161
IC = – 10 mA
for BC160
for BC161
IE = – 100 µA
IC = – 0.1 A
IC = – 0.5 A
IC = – 1 A
IB = – 10 mA
IB = – 50 mA
IB = – 0.1 A
VB E *
hFE*
Base-emitter Voltage
DC Current Gain
IC = – 1 A
VCE = – 1 V
IC = – 100 µA VCE = – 1 V
for BC160-161
for BC160-161 Gr. 6
for BC160-161 Gr. 10
for BC160-161 Gr. 16
IC = – 100 mA VCE = – 1 V
for BC160-161
for BC160-161 Gr. 6
for BC160-161 Gr. 10
for BC160-161 Gr. 16
hFE*
DC Current Gain
IC = – 1 A
VCE = – 1 V
for BC160-161
for BC160-161 Gr. 6
for BC160-161 Gr. 10
for BC160-161 Gr. 16
fT
C CBO
Transition Frequency
Collector-base
Capacitance
I C = – 50 mA
IE = 0
f = 1 MHz
VCE = – 10 V
VCB = – 20 V
CEBO
Emitter-base
Capacitance
VEB = – 0.5 V f = 1 MHz
ton
Turn-on Time
IC = – 100 mA
I B1 = – 5 mA
toff
Turn-off Time
IC = – 100 mA
I B1 = IB2 = – 5mA
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
– 40
– 60
– 40
– 60
–5
40
40
63
100
50
– 100
– 100
– 100
– 100
– 0.1
– 0.35
– 0.6
–1
–1
– 1.7
110
46
80
120
140
250
63
100
100
160
160
250
26
15
20
30
15
30
180
500
650
Unit
nA
nA
µA
µA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
2/5
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