LT1034CS8-1.2 데이터 시트보기 (PDF) - Linear Technology
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LT1034CS8-1.2 Datasheet PDF : 8 Pages
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LT1034-1.2/LT1034-2.5
ELECTRICAL CHARACTERISTICS The q denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C.
PARAMETER
Reverse Breakdown Voltage
CONDITIONS
IR = 100µA
Reverse Breakdown Change
with Current
(Note 4)
2mA ≤ IR ≤ 20mA
Minimum Operating Current
Temperature Coefficient
Reverse Dynamic Impedance (Note 3)
IR = 100µA
IR = 100µA
LT1034B
LT1034
Low Frequency Noise
Long-Term Stability
IR = 100µA, 0.1Hz ≤ F ≤ 10Hz
IR = 100µA
LT1034-1.2
MIN TYP MAX
LT1034-2.5
MIN TYP MAX
UNITS
1.210 1.225 1.240 2.46 2.5 2.54
V
q 1.205 1.225 1.245 2.43 2.5 2.57
V
0.5 2.0
q
1.0 4.0
4.0 8.0
q
6.0 15.0
1.0 3.0
mV
1.5 6.0
mV
6.0 16.0
mV
10.0 20.0
mV
q
10 20
15 30
µA
q
10 20
20 40
10 20
20 40
ppm/°C
ppm/°C
0.25 1.0
q
0.50 2.0
0.5 1.5
Ω
1.0 2.5
Ω
q
4
20
6
µVP-P
20
ppm/√khrs
The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
7V Reference.
PARAMETER
Reverse Breakdown Voltage
Reverse Breakdown Change
with Current
Temperature Coefficient
Long-Term Stability
CONDITIONS
IR = 100µA
100µA ≤ IR ≤ 1mA
100µA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
1mA ≤ IR ≤ 20mA
IR = 100µA
IR = 100µA
MIN TYP MAX
UNITS
6.80 7.0
7.3
V
q
6.75 7.0
7.4
V
90
140
mV
q
100
190
mV
160
250
mV
q
200
350
mV
q
40
ppm/°C
20
ppm/√khrs
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Forward biasing either diode will affect the operation of the other
diode.
Note 3: This parameter guaranteed by “reverse breakdown change with
current” test.
Note 4: For the LT1034-1.2: 20µA ≤ IR ≤ 2mA. For the LT1034-2.5:
30µA ≤ IR ≤ 2mA.
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