MMDJ-65608EV-45 데이터 시트보기 (PDF) - Atmel Corporation

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MMDJ-65608EV-45

Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

Atmel Corporation 

DC Parameters

DC Test Conditions

Table 3. DC Test Conditions

TA = -55°C to + 125°C; Vss = 0V; VCC = 4.5V to 5.5V

Symbol

Description

Minimum

IIX (1)

Input leakage

current

-1

IOZ(1)

VOL (2)

Output leakage

current

-1

Output low voltage

–

VOH (3)

Output high

voltage

2.4

1.

GND < Vin < VCC, GND < Vout < VCC Output Disabled.

2.

VCC min. IOL = 8 mA.

3.

VCC min. IOH = -4 mA.

Typical

–

–

–

–

Consumption

Symbol

Description

65608E-30

65608E-45

ICCSB (1)

Standby supply

current

2

2

ICCSB1 (2)

Standby supply

current

300

300

ICCOP (3)

Dynamic operating

current

130

100

1.

CS1 > VIH or CS2 < VIL and CS1 < VIL.

2.

CS1 > VCC - 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V.

3.

F = 1/TAVAV, Iout = 0 mA, W = OE = VIH, Vin = GND or VCC, VCC max.

Maximum

1

1

0.4

–

Unit

mA

µA

mA

Unit

µA

µA

V

V

Value

max

max

max

5 M65608E

4151I–AERO–03/04

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