MBR2535CT 데이터 시트보기 (PDF) - ON Semiconductor
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MBR2535CT Datasheet PDF : 4 Pages
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MBR2535CT, MBR2545CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR2535CT
MBR2545CT
VRRM
V
VRWM
VR
35
45
Average Rectified Forward Current
(Rated VR, TC = 160°C)
IF(AV)
30
A
Peak Repetitive Forward Current,
per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C)
IFRM
30
A
Non−Repetitive Peak Surge Current per Diode Leg
IFSM
150
A
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
IRRM
Tstg
TJ
dv/dt
ESD
1.0
−65 to +175
−65 to +175
10,000
>400
>8000
A
°C
°C
V/ms
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance,− Junction−to−Case
− Junction−to−Ambient (Note 2)
2. When mounted using minimum recommended pad size on FR−4 board.
Symbol
RqJC
RqJA
Value
1.5
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VF
Instantaneous Forward Voltage
IF = 15 Amp, TJ = 25°C
−
(Note 3)
IF = 15 Amp, TJ = 125°C
−
IF = 30 Amp, TJ = 25°C
−
IF = 30 Amp, TJ = 125°C
−
IR
Instantaneous Reverse Current
(Note 3)
Rated dc Voltage, TJ = 25°C
−
Rated dc Voltage, TJ = 125°C
−
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
−
0.62
V
0.50
0.57
−
0.82
0.65
0.72
−
0.2
mA
9.0
25
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