MCP6S26T(2012) 데이터 시트보기 (PDF) - Microchip Technology

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MCP6S26T
(Rev.:2012)

Single-Ended, Rail-to-Rail I/O, Low Gain PGA

Microchip Technology 

MCP6S21/2/6/8

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND.

Parameters

Sym

Min

Typ Max Units

Conditions

Temperature Ranges

Specified Temperature Range

TA

Operating Temperature Range

TA

Storage Temperature Range

TA

Thermal Package Resistances

-40

— +85 °C

-40

— +125 °C (Note 1)

-65

— +150 °C

Thermal Resistance, 8L-PDIP

JA

—

85

— °C/W

Thermal Resistance, 8L-SOIC

JA

—

163 — °C/W

Thermal Resistance, 8L-MSOP

JA

—

206 — °C/W

Thermal Resistance, 14L-PDIP

JA

—

70

— °C/W

Thermal Resistance, 14L-SOIC

JA

—

120 — °C/W

Thermal Resistance, 14L-TSSOP JA

—

100 — °C/W

Thermal Resistance, 16L-PDIP

JA

—

70

— °C/W

Thermal Resistance, 16L-SOIC

JA

—

90

— °C/W

Note 1: The MCP6S21/2/6/8 family of PGAs operates over this extended temperature range, but with reduced

performance. Operation in this range must not cause TJ to exceed the Maximum Junction Temperature

(150°C).

CS

tCH

CS

tG

VOUT

FIGURE 1-1:

Diagram.

0.6V

0.3V

Channel Select Timing

CS

tON

tOFF

VOUT

Hi-Z

0.3V

Hi-Z

ISS

500 nA (typ)

1.0 mA (typ)

FIGURE 1-2:

PGA Shutdown timing

diagram (must enter correct commands before

CS goes high).

VOUT

FIGURE 1-3:

Diagram.

1.5V

0.3V

Gain Select Timing

VDD VPOR - 0.1V

VPOR + 0.1V

tRPU

VPOR - 0.1V

tRPD

VOUT

ISS

Hi-Z

Hi-Z

0.3V

500 nA (typ)

1.0 mA (typ)

FIGURE 1-4:

POR power-up and power-

down timing diagram.

 2003-2012 Microchip Technology Inc.

DS21117B-page 5

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