MGSF2N02ELT1(2002) 데이터 시트보기 (PDF) - ON Semiconductor
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MGSF2N02ELT1 Datasheet PDF : 8 Pages
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MGSF2N02EL
8
VGS = 10 V
TJ = 25°C
5
VDS w 10 V
VGS = 7 V
VGS = 5 V
VGS = 2.2 V
4
6
VGS = 2.6 V
VGS = 2.0 V
3
4
VGS = 3 V
VGS = 1.8 V
2
TJ = 55°C
2
VGS = 1.6 V
TJ = 100°C
1
VGS = 1.2 V
0
0
0.5
1
1.5
0
2
2.5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 1. On–Region Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.12
0.3
TJ = 25°C
TJ = 25°C
0.10
ID = 3.6 A
0.2
0.08
0.06
0.1
VGS = 2.5 V
0.04
0.02
0
0
2
4
6
8
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (V)
–ID, DRAIN CURRENTS (AMPS)
Figure 3. On–Resistance vs. Gate–to–Source Voltage
Figure 4. On–Resistance vs. Gate Voltage
1.8
ID = 3.6 A
VGS = 4.5 V
1.5
1.2
0.9
10000
VGS = 0 V
1000
TJ = 150°C
100
TJ = 100°C
0.6
–50 –25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with Temperature
10
4
8
12
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 6. Drain–to–Source Leakage Current vs.
Voltage
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