MJD112(2004) 데이터 시트보기 (PDF) - ON Semiconductor
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MJD112 Datasheet PDF : 8 Pages
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MJD112 (NPN) MJD117 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V2
APPROX
TUT
RB
VCC
−30 V
RC SCOPE
+8 V
0
51 D1
≈ 8 k ≈ 60
V1
APPROX
−12 V
+4V
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 1. Switching Times Test Circuit
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VCC = 30 V
IB1 = IB2
ts
IC/IB = 250
TJ = 25°C
2
tf
1
0.8
0.6
tr
0.4
0.2
0.04 0.06
td @ VBE(off) = 0 V
PNP
NPN
0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07 0.01
0.05
0.03 SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5
1
2 3 5 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
Figure 3. Thermal Response
100 200 300 500 1000
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