MJD112(2004) 데이터 시트보기 (PDF) - ON Semiconductor

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MJD112
(Rev.:2004)

Complementary Darlington Power Transistors

ON Semiconductor 

MJD112 (NPN) MJD117 (PNP)

ACTIVE−REGION SAFE−OPERATING AREA

10

7

5

100 ms

3

2

500 ms

1

0.7

1 ms

5 ms

0.5

dc

0.3

0.2

BONDING WIRE LIMITED

0.1

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

TJ = 150°C

CURVES APPLY BELOW RATED VCEO

2 3 5 7 10

20 30 50 70 100

200

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 4. Maximum Rated Forward Biased

Safe Operating Area

TA TC

2.5 25

2 20

1.5 15

1 10

0.5 5

00

25

TA

TC

SURFACE

MOUNT

50

75

100

125

15

T, TEMPERATURE (°C)

Figure 5. Power Derating

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

200

TC = 25°C

100

70

50

30

20

10

0.04 0.06 0.1

PNP

NPN

0.2 0.4 0.6 1

Cob

Cib

2 4 6 10 20 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

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