MJD112 데이터 시트보기 (PDF) - STMicroelectronics

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MJD112

Complementary power Darlington transistors

STMicroelectronics 

Absolute maximum ratings

1

Absolute maximum ratings

Note:

Table 2. Absolute maximum ratings

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICM

IB

PTOT

TSTG

TJ

Collector-base voltage (IE = 0)

Collector-emitter voltage (IB = 0)

Emitter-base voltage (IC = 0)

Collector current

Collector peak current

Base current

Total dissipation at Tcase = 25 °C

Storage temperature

Max. operating junction temperature

For PNP types voltage and current values are negative.

Table 3. Thermal data

Symbol

Parameter

RthJC Thermal resistance junction-case max.

MJD112, MJD117

Value

Unit

100

V

5

V

2

A

4

A

0.05

A

20

W

-65 to 150

°C

150

°C

Value

6.25

Unit

°C/W

2/10

Doc ID 3540 Rev 3

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