MJD122 데이터 시트보기 (PDF) - Weitron Technology
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MJD122 Datasheet PDF : 4 Pages
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MJD122
ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted)
Parameter
Symbol
Min
Collector-Base Breakdown Voltage
IC=1mA
Collector-Emitter Breakdown Voltage
IC=30mA
Emitter-Base Breakdown Voltage
IE=3mA
BVCBO
100
BVCEO
100
BVEBO
5.0
Collector Cutoff Current
VCB=100V
ICBO
-
Collector Emitter Cutoff Current
VCE=50V
Emitter Cutoff Current
VEB =5.0V
ICEO
-
IEBO
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
10
µA
-
10
µA
-
2
mA
ON CHARACTERISTICS
DC Current Gain
VCE=4V, IC=4A
VCE=4V, IC=8A
Collector-Emitter Saturation Voltage
IC=4A, IB=16mA
IC=8A, IB=80mA
Base-Emitter Saturation Voltage
IC=8A, IB=80mA
Base-Emitter On Voltage
VCE=4A, IC=4A
Output Capacitance
VCB=10V, IE=0, f=0.1MHz
hFE(1)
hFE(2)
1000
100
-
12000
-
-
-
VCE(sat)
-
VBE(sat)
-
V(on)
-
-
2.0
V
4.0
-
4.5
V
-
2.8
V
Cob
-
200
-
pF
WEITRON
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http://www.weitron.com.tw
13-Apr-07
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