MJD200G(2005) 데이터 시트보기 (PDF) - ON Semiconductor

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MJD200G
(Rev.:2005)

Complementary Plastic Power Transistors

ON Semiconductor 

MJD200 (NPN)

MJD210 (PNP)

Complementary Plastic

Power Transistors

NPN/PNP Silicon DPAK For Surface

Mount Applications

Designed for low voltage, low−power, high−gain audio

amplifier applications.

Features

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

• High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc

= 45 (Min) @ IC = 2 Adc

= 10 (Min) @ IC = 5 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

= 0.75 Vdc (Max) @ IC = 2.0 Adc

• High Current−Gain − Bandwidth Product −

fT = 65 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakage −

ICBO = 100 nAdc @ Rated VCB

• Epoxy Meets UL 94, V−0 @ 0.125 in.

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

http://onsemi.com

SILICON

POWER TRANSISTORS

5 AMPERES

25 VOLTS

12.5 WATTS

MARKING

DIAGRAM

12

3

4

DPAK

CASE 369C

STYLE 1

Y

= Year

WW

= Work Week

x

= 1 or 0

YWW

J2x0

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

 Semiconductor Components Industries, LLC, 2005

1

February, 2005 − Rev. 6

Publication Order Number:

MJD200/D

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