MJD210G(2011) 데이터 시트보기 (PDF) - ON Semiconductor
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MJD210G Datasheet PDF : 6 Pages
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MJD200 (NPN) MJD210 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
RqJC
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Max
Unit
10
°C/W
89.3
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 3), (IC = 10 mAdc, IB = 0)
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 40 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 40 Vdc, IE = 0, TJ = 125°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS
DC Current Gain (Note 3),
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 500 mAdc, VCE = 1 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 2 Adc, VCE = 1 Vdc)
(IC = 5 Adc, VCE = 2 Vdc)
VCEO(sus)
25
VCBO
−
−
VEBO
−
hFE
70
45
10
−
Vdc
100
nAdc
100
mAdc
100
nAdc
−
−
180
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 500 mAdc, IB = 50 mAdc)
(IC = 2 Adc, IB = 200 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 5 Adc, IB = 1 Adc)
VCE(sat)
Vdc
−
0.3
−
0.75
−
1.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage (Note 3), (IC = 5 Adc, IB = 1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (Note 3), (IC = 2 Adc, VCE = 1 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
VBE(sat)
VBE(on)
fT
MJD200
Cob
MJD210
−
2.5
Vdc
−
1.6
Vdc
65
−
MHz
−
80
pF
−
120
4. fT = ⎪hfe⎪• ftest.
ORDERING INFORMATION
Device
Package Type
Shipping†
MJD200G
DPAK
(Pb−Free)
75 Units / Rail
MJD200RLG
DPAK
(Pb−Free)
1800 / Tape & Reel
MJD200T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
MJD210G
DPAK
(Pb−Free)
75 Units / Rail
MJD210RLG
DPAK
(Pb−Free)
1800 / Tape & Reel
MJD210T4
DPAK
MJD210T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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