MJD210 데이터 시트보기 (PDF) - Unisonic Technologies
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MJD210 Datasheet PDF : 5 Pages
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MJD210
TYPICAL CHARACTERISTICS (Cont.)
+2.5
+2
+1.5
+1
Temperature Current (A)
*Applies For IC/IB≤hEF/3
25℃ to 150℃
+0.5
0
-0.5
-1
-1.5
*θVC for VCE(SAT)
-55℃ to 25℃
θVB for VBE
25℃ to 150℃
-55℃ to 25℃
-2
-2.5
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1
2 35
Collector Current, IC(A)
PNP SILICON TRANSISTOR
Capacitance
200
Cib
TJ=25℃
100
70
50
Cob
30
20
0.4 0.5 1
2
4 6 10 20
40
Reverse Voltage, VR (V)
Active Region Safe Operating Area
10
100µ
5
500µ
3
2
1
TJ=150℃
1ms
DC
5ms
__ _ __ _Bonding Wire Limited
__ __ __ Thermally Limited @TC=25℃
(Singel Pulse)
0.1 _______ Second Breakdown Limited
Curves Aplly Below
Rated VCEO
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate IC-VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 9 is based on TJ(pk)=150℃; Tc is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk)150℃. TJ(pk) may be calculated from the data
in Figure 8. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
0.01
0.3
1
2 3 5 7 10 20 30
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R213-001.C
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