MJE13002 데이터 시트보기 (PDF) - SavantIC Semiconductor
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MJE13002 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
CHARACTERISTICS
Tj=25 unles otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
300
V
VCE(sat)-1
VCE(sat)-2
VCE(sat)-3
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
IC=0.5A; IB=0.1A
IC=1A; IB=0.25A
TC=100
IC=1.5A;IB=0.5A
0.5
V
1.0
1.0
V
3.0
V
VBE(sat)-1 Base-emitter saturation voltage
VBE(sat)-2 Base-emitter saturation voltage
ICEV
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.5A; IB=0.1A
IC=1A; IB=0.25A
TC=100
VCEV=Rated value; VBE (off) =1.5V
TC=100
VEB=9V; IC=0
1.0
V
1.2
1.1
V
1.0
5.0
mA
1.0 mA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
8
40
hFE-2
DC current gain
IC=1A ; VCE=2V
5
25
fT
Transition frequency
IC=0.1A ; VCE=10V;f=1MHz
4
MHz
COB
Collector outoput capacitance
IE=0;f=0.1MHz ; VCB=10V
21
pF
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=1A
IB1=-IB2=0.2A
tp=25µs
duty cycleC1%
0.05 0.1
µs
0.5
1.0
µs
2.0
4.0
µs
0.4
0.7
µs
2
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